Therefore, conformal growth of an atomically thin h-BN layer directly on a Si-based high-aspect-ratio nanostructure is necessary to overcome transfer-induced problems while taking great advantages offered by h-BN. Moreover, with such a transfer process, it is extremely unfeasible to attain a conformal and intact contact between the transferred h-BN and a Si-based target substrate having complex 3D nanostructures with a high aspect ratio for a wide range of real-world applications. However, it inevitably requires a transfer process of CVD-grown h-BN films onto a target substrate for device integration, provoking contaminations, wrinkles, folds, and tears in the h-BN films. Recent studies on h-BN synthesis have focused on the growth of high-quality films on catalytic metal substrates such as single-crystal Cu(111) (7) and Ni(111), (8) molten gold, (9) and alloys (10) by chemical vapor deposition (CVD) methods. Hexagonal boron nitride (h-BN) has attracted considerable attention due to its fascinating physical properties, including its atomically thin nature, large band gap, (1) excellent dielectric property, (2−4) thermal and chemical stability, (5) and thermal conductivity, (6) thus having great potential to replace conventional oxide- and nitride-based dielectric materials.
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